Theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes |
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| Authors: | Xinning Ho Lina Ye Slava V. Rotkin Xu Xie Frank Du Simon Dunham Jana Zaumseil John A. Rogers |
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| Affiliation: | (1) Department of Materials Science and Engineering, Beckman Institute, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1304 West Green Street, Urbana, Illinois 61801, USA;(2) Department of Chemistry, University of Science and Technology of China, Hefei, 230026, China;(3) Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, USA;(4) Centre for Advanced Materials and Nanotechnology, Lehigh University, Bethlehem, Pennsylvania 18015, USA;(5) Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA;(6) Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;(7) Department of Electrical and Computer Engineering, Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA; |
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| Abstract: | We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe the single-tube and array devices. We show that for as-grown array diodes, the rectification ratio, defined by the maximum-to-minimum-current-ratio, is low due to the presence of metallic-single-walled nanotube (SWNT) shunts. These tubes can be eliminated in a single voltage sweep resulting in a high rectification array device. Further analysis also shows that the channel resistance, and not the intrinsic nanotube diode properties, limits the rectification in devices with channel length up to 10 μm. |
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