| 用于横向RESURF器件击穿电压优化的电荷分配模型 |
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| 引用本文： | 李小刚,冯志成,张正元,胡明雨. 用于横向RESURF器件击穿电压优化的电荷分配模型[J]. 半导体学报, 2009, 30(3): 034005-4 |
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| 作者姓名： | 李小刚 冯志成 张正元 胡明雨 |
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| 作者单位： | No.24;Research;Institute;China;Electronics;Technology;Group;Corporation;National;Laboratory;Analog; |
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| 摘 要： | A new quite simple analytical model based on the charge allocating approach has been proposed to describe the breakdown property of the RESURF （reduced surface field） structure. It agrees well with the results of numerical simulation on predicting the breakdown voltage. Compared with the latest published analytical model, this model has a better accuracy according to the numerical simulation with simpler form. The optimal doping concentration （per unit area） of the epi-layer of the RESURF structures with different structure parameters has been calculated based on this model and the results show no significant discrepancy to the data gained by others. Additionally the physical mechanism of how the surface field is reduced is clearly illustrated by this model.
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| 关 键 词： | RESURF器件 计算模型 击穿电压 分配模式 RESURF结构 优化 收费 最佳掺杂浓度 |
| 收稿时间： | 2008-08-11 |
Acharge allocating model for the breakdown voltage calculation and optimization of the lateral RESURF devices |
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| Li Xiaogang,Feng Zhicheng,Zhang Zhengyuan and Hu Mingyu. Acharge allocating model for the breakdown voltage calculation and optimization of the lateral RESURF devices[J]. Chinese Journal of Semiconductors, 2009, 30(3): 034005-4 |
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| Authors: | Li Xiaogang Feng Zhicheng Zhang Zhengyuan Hu Mingyu |
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| Affiliation: | 1 No.24 Research Institute of China Electronics Technology Group Corporation;Chongqing 400060;China;2 National Laboratory of Analog IC;China |
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| Abstract: | A new quite simple analytical model based on the charge allocating approach has been proposed to describe the breakdown property of the RESURF(reduced surface field) structure.It agrees well with the results of numerical simulation on predicting the breakdown voltage.Compared with the latest published analytical model,this model has a better accuracy according to the numerical simulation with simpler form.The optimal doping concentration(per unit area) of the epi-layer of the RESURF structures with differen... |
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| Keywords: | RESURF devices analytical model breakdown voltage device optimization |
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