第二代接近式X射线光刻技术

介绍了第二代PXL的原理和影响光刻分辨率的关键因素,当第二代PXL工艺因子为0.8时,对于50 nm及35 nm节点分辨率,掩模与硅片的间距可以分别达到10μm和5μm,表明第二代PXL具有很大的工艺宽容度;分析了纳米X射线掩模的具体结构、制作工艺和成本,相对于其竞争对手,在100 nm节点及其以下,X射线掩模的制造难度和成本是比较低的,而且随着电子束直写X射线掩模能力的进一步提高,X射线掩模更具优势;对几种常用的X射线光刻胶性能进行了分析,高性能的X射线光刻胶的研发不会成为PXL发展的障碍;对步进光刻机和X射线光源进行了论述,X射线点光源的研究进展对于第二代PXL的发展至关重要;最后介绍了第二代接近式X射线光刻的研究现状,尽管PXL的工业基础比起其它下一代光刻来说要好得多,但是比起光学光刻还差得很远,第二代PXL是否真正为硅基超大规模集成电路生产所接受目前还不得而知。

Second Generation Proximity X-ray Lithography Technology

First generation proxi mity X-ray lithography(PXL) has been used for gate definition in monolithicmicrowave integrated circuits(MMIC) manufacturing line successfully,to extend PXL to 50 nm node andbeyond,second generation PXLshould be presented.The principle of second generation PXLandthe keyfactorsi mpact onresolution areintroduced,whenthe processfactor of second generation PXLis equal to 0.8,for 50 nmand 35 nmnode resolution,the gap between X-ray mask and wafer reach 10 mmand 5 mmrespectively,it isdemonstrated that second generation PXL has large process latitude;the detail structure,fabrication process andcost of nanometer X-ray mask are analyzed,for 100 nmnode and below,the fabrication difficulty and cost of X-ray mask are low relatively,and with the development of E-beam direct writing ability,X-ray mask is moresuperior toits contender;some common X-ray resist performances are described,high performance X-ray resistwill not be an obstruction of PXL development;PXL stepper and X-ray source are also discussed,the R&D ofpoint X-ray source is extremely i mportant to the development of second generation PXL;the status of secondgeneration PXLis alsointroducedfinally,although PXLindustry baseis better than other next generation PXL,it is worse than optical lithography,ultra-large scaleintegrated circuits production will really accept PXLor not isnot yet known until now.