| Inx—Ga1—xAs／GaAs应变量子阱光学性质 |
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| 引用本文： | 李锋.Inx—Ga1—xAs／GaAs应变量子阱光学性质[J].红外与毫米波学报,1994,13(5):340-346. |
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| 作者姓名： | 李锋 |
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| 作者单位： | 中国科学院半导体研究所，中国科学院半导体研究所，中国科学院半导体研究所，中国科学院半导体研究所 半导体超晶格国家重点实验室，北京100083，半导体超晶格国家重点实验室，北京100083，半导体超晶格国家重点实验室，北京100083，表面界面国家重点实验室，北京100083 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 研究了用分子束外延方法生长在GaAs(100)衬底上的In_xGa_(1-x)As/GaAs(x=0.1)应变多量子阱样品,观察了其光荧光谱和光调制反射谱的光谱结构,讨论了有关基态光跃迁和激发态光跃迁性质.根据实验结果给出了能带偏移比值为Q_c=0.69(Q_v=1-Q_c=0.31),并提出有关轻空穴束缚于GaAs层而形成Ⅱ类超晶格的重要佐证.
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| 关 键 词： | 应变量子阱 能带偏移 砷化镓 光谱 |
OPTICAL PROPERTIES OF In_xGa_(1-x)As/GaAs STRAINED LAYER QUANTUM-WELLS |
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| Li Feng Zhang Yaohui Jiang Desheng.OPTICAL PROPERTIES OF In_xGa_(1-x)As/GaAs STRAINED LAYER QUANTUM-WELLS[J].Journal of Infrared and Millimeter Waves,1994,13(5):340-346. |
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| Authors: | Li Feng Zhang Yaohui Jiang Desheng |
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| Abstract: | Structures have been observed in the photoluminescence (PL) and the photoreflectance (PR) spectra of InxGa1-xAs/GaAs (x = 0.1) strained-layer multiple quantum-wells (QWs) grown by molecular-beam epitaxy on GaAs (100)-oriented substrate. The properties of the ground state transitions and the excited state transitions are discussed. The band offset ratio Qc = 0.69 (Qv = 1 - Qc = 0.31) is given based on the analysis of PL, PR experimental results. An important evidence, which indicates that the light holes are confined in the GaAs layer forming a type II superlattice, is provided. |
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| Keywords: | InxGa1-xAs/GaAs strained-layered quantum well band offset |
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