| 氧化增强注氧隔离工艺制备绝缘体上的硅锗 |
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| 引用本文： | 陈志君,张峰,王永进,金波,陈静,张正选,王曦.氧化增强注氧隔离工艺制备绝缘体上的硅锗[J].功能材料与器件学报,2006,12(1):1-4. |
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| 作者姓名： | 陈志君 张峰 王永进 金波 陈静 张正选 王曦 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所,半导体薄膜工程技术研究中心,上海,200050;中国科学院研究生院,北京,100039;中国科学院上海微系统与信息技术研究所,半导体薄膜工程技术研究中心,上海,200050 |
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| 摘 要： | 提出一种氧化增强注氧隔离工艺,在退火前氧化得到SiO2层,再进行高温退火得到绝缘体上的硅锗材料.经X射线摇摆曲线和拉曼测试发现所制备的绝缘体上的SiGe材料锗含量没有发生损失,且应变弛豫完全.透射电镜和二次离子质谱分析结果显示样品多层结构清晰,埋氧层质量完好、平整度高、无不连续、无硅岛.研究表明,氧化增加工艺的引入是绝缘体上的硅锗材料锗质量提高的关键.
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| 关 键 词： | 绝缘体上的硅锗 注氧隔离 埋氧 氧化 |
| 文章编号： | 1007-4252（2006）01-0001-04 |
| 收稿时间： | 2005-04-19 |
| 修稿时间： | 2005年4月19日 |
SiGe- on- insulator fabricated by oxidation enhanced SIMOX |
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| CHEN Zhi-jun,ZHANG Feng,WANG Yong-jin,JIN Bo,CHEN Jing,ZHANG Zheng-xuan,WANG Xi.SiGe- on- insulator fabricated by oxidation enhanced SIMOX[J].Journal of Functional Materials and Devices,2006,12(1):1-4. |
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| Authors: | CHEN Zhi-jun ZHANG Feng WANG Yong-jin JIN Bo CHEN Jing ZHANG Zheng-xuan WANG Xi |
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| Abstract: | A unique SIMOX method was introduced to fabricate SGOI and resolve the problem of Ge loss. During the process, a SiO2 layer was formed firstly pre - annealing to block the Ge out - diffusion. It results in full relaxed SGOI with Ge fraction amounts to 17at% as the X - ray rocking curve and Raman Spectra studies shown. The influences on heterostructure and compositional depth profiles by the surface oxide layer were explored by cross - sectional transmission electron microscopy and secondary ion mass Spectrometry studies. The final sample exhibits planar and continuous buried oxide layer, sharp interfaces and defects free SGOI. The results indicate that the additional step of thermal oxidation pre - annealing is vital for improving the crystalline quality of the SGOI. |
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| Keywords: | SiGe - on - insulator separation - by - implantation - of - oxygen buried oxide oxidation |
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