Morphological evolution and lateral ordering of uniform SiGe/Si(0 0 1) islands |
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Authors: | M. Stoffel A. Rastelli T. Merdzhanova G.S. Kar O.G. Schmidt |
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Affiliation: | aMax-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, D 70569 Stuttgart, Germany |
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Abstract: | By investigating the morphological evolution during epitaxial growth of Ge on Si(0 0 1) substrates, we find that highly uniform distributions of islands can be obtained. The islands are no longer domes but they consist of barns, which are bounded by steeper facets. A detailed morphological analysis indicates the presence of facets at their base, which are not stable for Ge but for Si. Finally, we show that long-range ordering of highly uniform SiGe barns can be obtained when the growth is performed on patterned Si(0 0 1) substrates. |
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Keywords: | SiGe islands Atomic force microscopy Facets Lateral ordering |
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