| SOI反偏肖特基势垒动态阈值MOS特性 |
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| 引用本文： | 毕津顺,海潮和.SOI反偏肖特基势垒动态阈值MOS特性[J].半导体学报,2006,27(9):1526-1530. |
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| 作者姓名： | 毕津顺 海潮和 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 将Ti硅化物-p型体区形成的反偏肖特基势垒结构引入绝缘体上硅动态阈值晶体管.传统栅体直接连接DTMOS,为了避免体源二极管的正向开启,工作电压应当低于0.7V.而采用反偏肖特基势垒结构,DTMOS的工作电压可以拓展到0.7V以上.实验结果显示,室温下采用反偏肖特基势垒SOI DTMOS结构,阈值电压可以动态减小200mV.反偏肖特基势垒SOI DTMOS结构相比于传统模式,显示出优秀的亚阈值特性和电流驱动能力.另外,对浮体SOI器件、传统模式SOI器件和反偏肖特基势垒SOI DTMOS的关态击穿特性进行了比较.
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| 关 键 词： | SOI 动态阈值 肖特基势垒 |
| 文章编号： | 0253-4177(2006)09-1526-05 |
| 收稿时间： | 02 21 2006 12:00AM |
| 修稿时间： | 4/24/2006 6:42:20 PM |
Study on the Characteristics of SOI DTMOS with Reverse Schottky Barriers |
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| Bi Jinshun and Hai Chaohe.Study on the Characteristics of SOI DTMOS with Reverse Schottky Barriers[J].Chinese Journal of Semiconductors,2006,27(9):1526-1530. |
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| Authors: | Bi Jinshun and Hai Chaohe |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
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| Abstract: | Silicon-on-insulator dynamic threshold voltage MOSFETs with TiSi2/p-Si as reverse Schottky barriers (RSB) are presented.With this RSB scheme,DTMOS can operate beyond 0.7V,thus overcoming the drawback of DTMOS with the gate and body connected.The experimental results demonstrate that the threshold voltage in DT mode with an RSB is reduced by about 200mV at room temperature.SOI MOSFETs in DT mode with an RSB have advantages such as excellent subthreshold slope and high drivability over those under normal mode operation.The breakdown characteristics of SOI MOSFETs in the off-state are compared for the DT mode with RSB,floating body mode,normal mode. |
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| Keywords: | SOI dynamic threshold Schottky barrier |
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