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Interfacial electronic structures between fullerene and multilayer graphene for n-type organic semiconducting devices |
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| Authors: | Yeonjin Yi Won Mook Choi Byoungchul Son Jeong Won Kim Seong Jun Kang |
| Affiliation: | aDepartment of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea;bDisplay Laboratory, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Republic of Korea;cDivision of Industrial Metrology, Korea Research Institute of Standards and Science, 267 Gajeong-ro, Daejeon 305-340, Republic of Korea;dDepartment of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Republic of Korea |
| Abstract: | The interfacial electronic structure of fullerene (C60) deposited on a multilayer graphene (MLG) film was measured using in situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy. The energy level alignment at the interface of C60/MLG was estimated by the shifts in the highest occupied molecular orbital (HOMO) and the vacuum level during step-by-step deposition of C60 on the MLG. The shift of the HOMO level indicates that there is a small band bending at the interface of C60/MLG. The vacuum level was shifted 0.06 eV toward the low binding energy with additional C60 on the MLG. The measurements reveal that the height of the electron injection barrier is 0.59 eV, while the hole injection barrier height is 2.01 eV. We present a complete interfacial energy level diagram for C60/MLG. |
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