Fabrication of monolithic twin-GaInAs pin photodiode for balanceddual-detector optical coherent receivers |
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| Authors: | Wada O. Miura S. Mikawa T. Aoki O. Kiyonaga T. |
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| Affiliation: | Fujitsu Labs., Atsugi; |
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| Abstract: | A monolithic twin-GaInAs/InP pin photodiode with planar, embedded structure has been fabricated for optical coherent receiver applications. High-uniformity (±1·5%) quantum efficiency and low capacitance (0·3 pF) have been achieved, and its advantage has been demonstrated by the intensity noise suppressions of a dual-detector balanced heterodyne receiver (better than -15 dB up to 4·2 GHz) |
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