RF-PECVD growth and nitrogen plasma functionalization of CNTs on copper foil for electrochemical applications |
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| Affiliation: | 1. Holst Centre – TNO, High Tech Campus 31, 5656AE Eindhoven, The Netherlands;2. CHOSE (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering, University of Rome Tor Vergata, Via del Politecnico 1, 00133 Rome, Italy;3. Holst Centre – Solliance, High Tech Campus 21, 5656AE Eindhoven, The Netherlands;4. Novacentrix, 400 Parker Drive, Austin, TX 78728, United States;1. Department of Solid State Engineering, University of Chemistry and Technology, 166 28 Prague 6, Czech Republic;2. Faculty of Science, P.J. Safarik University, Park Angelinum 9, 04013 Kosice, Slovakia;3. Faculty of Science, J.E. Purkyne University, 400 96 Usti nad Labem, Czech Republic;4. Department of Physical Chemistry, University of Chemistry and Technology Prague, 166 28 Prague 6, Czech Republic |
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| Abstract: | This work describes an efficient way to improve the adhesion, growth rate and density of CNTs on copper substrate using radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD). The adhesion of an alumina buffer layer to the copper substrate is critical for the successful growth of CNTs. Hydrogen plasma was performed on the copper substrate to reduce copper oxide from the surface. The effect of two intermediate layers (Ti, Ni), as individual or in combination, between alumina and copper substrate on the CNT growth has been investigated. Furthermore, a nitrogen plasma treatment was carried out to functionalize the obtained CNTs. Electrochemical measurements were performed using CNTs grown on a copper substrate as electrodes and LiClO4 as electrolyte. The specific capacitance of the obtained electrodes increases from 49 up to 227 Fg? 1 for untreated and nitrogen-plasma treated CNTs at a scan rate of 10 mVs? 1, respectively. |
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