Crystal growth and frequency conversion of BaMgF4 single crystal by temperature gradient technique |
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| Affiliation: | 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;2. Department of Physics, Key Laboratory for Laser Plasmas (Ministry of Education), Shanghai Jiao Tong University, Shanghai 200240, China;3. Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100080, China;1. Ural Federal University, 19, Mira Street, 620002 Ekaterinburg, Russia;2. Institute of Physics, University of Tartu, 14c Ravila Street, 50411 Tartu, Estonia;1. Departamento de Física, Ingeniería de Sistemas y Teoría de la Señal, Universidad de Alicante, Apartado 99, E-03080 Alicante, Spain;2. Instituto Universitario de Física Aplicada a las Ciencias y las Tecnologías, Universidad de Alicante, Apartado 99, E-03080 Alicante, Spain;3. Departamento de Óptica, Farmacología y Anatomía, Universidad de Alicante, Apartado 99, E-03080 Alicante, Spain;1. Laboratory of Advanced Materials and Technologies, Siberian Physical—Technical Institute of Tomsk State University, 1 Novosobornaya Sq., Tomsk 634050, Russia;2. National Physical Laboratory, Hampton Rd., Teddington TW11 0LW, UK;3. Laboratory of Geosphere–Biosphere Interactions, Institute of Monitoring of Climatic and Ecological Systems SB RAS, 10/3 Akademicheskii Ave., Tomsk 634055, Russia;4. Laboratory of Crystal Growth, V.S. Sobolev Institute of Geology and Mineralogy, SB RAS, 3 Koptyug Ave., Novosibirsk 630090, Russia;5. Novosibirsk State University, 2, Pirogova Str., Novosibirsk 630090, Russia;1. Experimental Physics Department, Ural Federal University, 19 Mira Street, Yekaterinburg 620002, Russia;2. Institute of Physics, University of Tartu, 14c Ravila Street, Tartu 50411, Estonia;1. Applied Science College, Harbin University of Science and Technology, Harbin 150080, China;2. Department of Chemistry, Harbin Institute of Technology, Harbin 150001, China;1. CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics&Chemistry, CAS; Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China;2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | The BaMgF4 single crystal was grown by the temperature gradient technique. Highly pure MgF2 and BaF2 powders were used as raw materials and CaF2 single crystal was chosen as a seed to induce BaMgF4 single crystal grow along 〈0 0 1〉 orientation. The short cut-off wavelength of BaMgF4 single crystal was determined to be 130 nm which is consistent with the previously reported result. We realized second harmonic generation from 1064 nm to 532 nm laser, and 800 nm to 400 nm femtosecond laser in single domain BaMgF4 by using birefringent phase matching. 355-nm-wavelength laser was produced by Sum-Frequency Generation from 1064-nm- and 532-nm-wavelength laser, which is the shortest coherent radiation obtained in the UV in the BaMgF4 crystal. |
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| Keywords: | Fluorides Crystal growth Optical properties |
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