Heavy phosphorus doping by epitaxial growth on the (111) diamond surface |
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| Affiliation: | 1. Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA;2. Fraunhofer Center for Coatings and Laser Applications, East Lansing, MI 48824, USA;1. School of Chemistry, University of Bristol, Bristol BS8 1TS, United Kingdom;2. Interface Analysis Centre, H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom;1. Technological Institute for Superhard and Novel Carbon Materials, 7a Centralnaya St., Troitsk, Moscow 142190, Russia;2. Moscow Institute of Physics and Technology, 9 Institutskiy Per., Dolgoprudny, Moscow Region 141700, Russia;3. National University of Science and Technology MISiS, 4 Leninsky Ave., Moscow 119049, Russia;1. Institute of Physics, Academy of Sciences Czech Republic v.v.i, Na Slovance 2, 182 21 Prague 8, Czech Republic;2. Faculty of Biomedical Engineering, Czech Technical University in Prague, Sitna sq. 3105, 272 01 Kladno, Czech Republic;3. Univ. Grenoble Alpes, Inst. NEEL, F-38042 Grenoble, France;4. CNRS, Inst. NEEL, F-38042 Grenoble, France;5. Groupe d''Etude de la Matière Condensée (GEMaC), Université Versailles St Quentin, CNRS, Versailles 78035, France;6. Institut d''Electronique, de Microélectronique et de Nanotechnologie (IEMN), F-59652 Villeneuve d''Ascq, France;7. Hasselt University, Institute for Materials Research (IMO), Wetenschapspark 1, B-3590 Diepenbeek, Belgium;8. IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek, Belgium;1. Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan;2. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 305-8568, Japan;3. Core Research for Evolutional Science and Technology (CREST), c/o AIST, Tsukuba, Ibaraki 305-8568, Japan |
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| Abstract: | Semiconducting n-type diamond can be fabricated using phosphorus as a substitutional donor dopant. The dopant activation energy level at 0.58 eV is deep. At high dopant concentrations of 1020 cm? 3 the activation energy reduces to less than 0.05 eV. Phosphorus doping at concentrations of 1020 cm? 3 or higher has been achieved with epitaxial growth on the (111) diamond crystallographic surface. In this work epitaxial growth of diamond with high phosphorus concentrations exceeding 1020 cm? 3 is performed using a microwave plasma-assisted chemical vapor deposition process with process conditions that include a pressure of 160 Torr. This pressure is higher than previous phosphorus doping reports of (111) surface diamond growth. The other growth conditions include a feedgas mixture of 0.25% methane and 500 ppm phosphine in hydrogen, and a substrate temperature of 950–1000 °C. The measured growth rate was 1.25 μm/h. The room temperature resistivity of the heavily phosphorus doped diamond was 120–150 Ω-cm and the activation energy was 0.027 eV. |
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