Scintillation properties of the Ce-doped multicomponent garnet epitaxial films |
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| Affiliation: | 1. Institute of Physics AS CR, Cukrovarnicka 10, 16253 Prague, Czech Republic;2. Czech Technical University in Prague, Faculty of Nuclear Sciences and Physical Engineering, Brehova 7, 11519 Prague 1, Czech Republic;3. Charles University, Faculty of Mathematics and Physics, Ke Karlovu 5, 12116 Prague 2, Czech Republic;1. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okolna 2, 50-950, Wroc?aw, Poland;2. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668, Warsaw, Poland;1. Institute of Physics, Kazimierz Wielki University in Bydgoszcz, 85-090 Bydgoszcz, Poland;2. Department of Electronics, Ivan Franko National University of Lviv, 79017 Lviv, Ukraine;3. Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland;4. Institute of Nuclear Physics, Polish Academy of Science, 31-342 Krakow, Poland;1. Institute of Physics, Kazimierz Wielki University in Bydgoszcz, 2 Powstańców Wielkopolskich str., 85090 Bydgoszcz, Poland;2. Electronics Department, Ivan Franko National University of Lviv, 50 Dragomanov str., 79017 Lviv, Ukraine;3. European Synchrotron Radiation Facility (ESRF), 71 Avenue des Martyrs, 38000 Grenoble, France;4. Institute Lumière Matière, Université Claude Bernard Lyon 1-CNRS, UMR 5306, Université de Lyon, F-69622 Villeurbanne Cedex, France;5. Institute for Single Crystals, NAS of Ukraine, 60 Lenin av., 61178 Kharkiv, Ukraine;6. Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland;7. Lviv Polytechnic National University, 79646 Lviv, Ukraine;1. Institute of Physics, Kazimierz Wielki University in Bydgoszcz, 85090 Bydgoszcz, Poland;3. Danylo Halytskyy Lviv National Medical University, 79010 Lviv, Ukraine;4. Institute for Scintillation Materials, NAS of Ukraine, 61001 Kharkiv, Ukraine;5. Institute of Physics, AS CR, 16253 Prague, Czech Republic;6. Institute of Nuclear Physic, Polish Academy of Science, 31-342 Krakow, Poland |
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| Abstract: | (Lu,Y,Gd)3(Al,Ga)5O12:Ce garnet scintillator single crystalline films were grown onto LuAG, YAG and GGG substrates by liquid phase epitaxy method. Absorption, radioluminescence spectra and photoluminescence excitation, emission spectra, and decay kinetics were measured. Photoelectron yield, its dependence on amplifier shaping time and energy resolution were determined to evaluate scintillation performance. Most of the samples exhibited strong UV emission caused by trapped excitons and/or Gd3+ 4f–4f transition. However, emission spectrum of the best performing Gd2YAl5O12:Ce is dominated by the Ce3+ fast 5d–4f luminescence. This sample has outperformed photoelectron yield of all the garnet films studied so far. |
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| Keywords: | Scintillator Liquid phase epitaxy method Photoelectron yield Garnet |
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