Optical,electrical and mechanical properties of Ga-doped ZnO thin films under different sputtering powers |
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| Affiliation: | 1. Research Center for New Generation Photovoltaics, National Central University, Taoyuan 32001, Taiwan, ROC;2. Industrial Technology Research Institute, Hsinchu 31040, Taiwan, ROC;3. Department of Electrical Engineering, Feng Chia University, Taichung City 40724, Taiwan, ROC;1. Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, Kyiv 03142, Ukraine;2. Department of Physics, Eastern European National University, 13 Voli Avenue, Lutsk 43025, Ukraine;3. Department of Inorganic and Physical Chemistry, Eastern European National University, 13 Voli Avenue, Lutsk 43025, Ukraine;1. Departamento de Física, Ingeniería de Sistemas y Teoría de la Señal, Universidad de Alicante, Apartado 99, E-03080 Alicante, Spain;2. Instituto Universitario de Física Aplicada a las Ciencias y las Tecnologías, Universidad de Alicante, Apartado 99, E-03080 Alicante, Spain;3. Departamento de Óptica, Farmacología y Anatomía, Universidad de Alicante, Apartado 99, E-03080 Alicante, Spain;1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;2. Department of Electrical Engineering, National Ilan University, No.1, Sec.1, Shen-Lung Road, Ilan 2604, Taiwan, ROC;1. Institute of Physics, Nicolaus Copernicus University, 5/7 Grudziądzka Str., 87-100 Toruń, Poland;2. Vlokh Institute of Physical Optics, Sector of Spectroscopy, 23 Dragomarov Str., 79-005 Lviv, Ukraine;3. Institute of Physics, University of Zielona Góra, 4a Szafrana Str., 65-069 Zielona Góra, Poland;1. Experimental Physics Department, Ural Federal University, 19 Mira Street, Yekaterinburg 620002, Russia;2. Institute of Physics, University of Tartu, 14c Ravila Street, Tartu 50411, Estonia |
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| Abstract: | We present the optical, electrical and mechanical properties of Ga-doped zinc oxide (GZO) thin films prepared by radio-frequency (RF) magnetron sputtering at room temperature under different RF powers (80–180 W). The thickness, electron concentration, and electron mobility of the GZO thin film were determined by fitting the visible-to-near-infrared transmittance spectrum of GZO film/glass using the transfer matrix method. The bending force per unit width was measured by a home-made Twyman–Green interferometer with the fast Fourier transform method. The obtained results show that the optical, electrical and mechanical properties of GZO thin film are subject to the RF power. At an RF power of 140 W, the local minimum of bending force per unit width corresponds to the highest electron mobility in GZO thin film. This study demonstrates that the optical, electrical and mechanical properties of GZO thin film can be fully resolved by non-contact optical methods. |
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| Keywords: | Optical properties Electrical properties Mechanical properties Transparent conducing oxides |
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