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Optical properties of plasma-assisted molecular beam epitaxy grown InN/sapphire
Affiliation:1. Department of Physics, Indiana University of Pennsylvania, 975 Oakland Avenue, 56 Weyandt Hall, Indiana, PA 15705-1087, USA;2. Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei 106-17, Taiwan, ROC;3. Center for Condensed Matter Sciences, National Taiwan University, Taipei 106-17, Taiwan, ROC;4. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 115, Taiwan, ROC;1. Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, Shanxi, PR China;2. Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024, Shanxi, PR China;3. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, Shanxi, PR China;4. College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024, Shanxi, PR China;1. Instituto de Fisica, Universidade Federal de Uberlandia, CEP38408-902 Uberlandia, Minas Gerais, Brazil;2. CIMAP – Centre de recherche sur les Ions, les Matériaux et la Photonique UMR 6252 CEA-CNRS-ENSICAEN-Université de Caen, 14050 CAEN Cedex 4, France;3. Instituto de Física de São Carlos, Universidade de São Paulo, USP, CEP 13560-970 São Carlos, SP, Brazil;1. Nankai University School of Medicine, Nankai University, 94 Weijin Road, Tianjin 300071, PR China;2. State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, PR China;1. School of Materials Science and Engineering, Shanghai University, No. 99 Shangda Road, Baoshan District, Shanghai 200444, China;2. Instrumental Analysis and Research Center, Shanghai University, China
Abstract:The optical properties of as-grown InN/sapphire films prepared by plasma assisted molecular beam epitaxy (PA-MBE) are characterized by photoluminescence (PL), Raman scattering (RS) and infrared (IR) reflectance techniques. The PL measurements have consistently exhibited lower values of InN band gaps providing clear indications of electron concentration dependent peak energy shifts and widths. The phonon modes identified by RS are found to be in good agreement with the grazing inelastic X-ray scattering measurements and ab initio lattice dynamical calculations. An effective medium theory used to analyze IR reflectance spectra of InN/sapphire films has provided reasonable estimates of free charge carrier concentrations.
Keywords:Photoluminescence  Raman scattering  IR spectroscopy  PA-MBE InN/Sapphire
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