Selective laser treatment and laser patterning of metallic and semiconducting nanotubes in single walled carbon nanotube films |
| |
| Affiliation: | 1. Fraunhofer Institute for Material and Beam Technology, Winterbergstr. 28, 01277 Dresden, Germany;2. Technische Universität Dresden, Institute of Surface and Manufacturing Technology, George-Bähr-Str. 3c, 01069 Dresden, Germany;3. Technische Universität Dresden, Institute for Materials Science, Hallwachsstr. 3, 01069 Dresden, Germany;1. State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;3. School of Materials Science & Engineering, Shaanxi University of Science and Technology, Xi''an, Shaanxi 710021, China;4. Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;1. School of Materials Engineering, Shanghai University of Engineering Science, Shanghai 201620, China;2. Shanghai Collaborative Innovation Center of Laser Advanced Manufacturing Technology, Shanghai 201620, China |
| |
| Abstract: | Single wall carbon nanotubes (SWCNT) synthesized using mass production methods such as pulsed arc deposition consist of a mixture of metallic and semiconducting nanotubes. In this work, we report on an approach for the selective removal of either metallic or semiconducting SWCNT by a heat-treatment process with cw-lasers and pulsed lasers with specific wavelengths. The results show that using ultraviolet–visible radiation (with wavelengths between 473 nm and 632 nm) it is possible to remove predominantly metallic nanotubes. In contrast, near infrared lasers with 785 nm and 1064 nm wavelengths can be used to remove predominantly the semiconducting nanotubes. Finally, the fabrication of SWCNT films with an anisotropic distribution of metallic and semiconducting nanotubes is demonstrated using a direct laser interference pattering method. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
