Interface and interlayer barrier effects on photo-induced electron emission from low work function diamond films |
| |
| Affiliation: | 1. Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USA;2. Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow Region 142190, Russia;3. Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region 141700, Russia;1. Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;2. National Institute of Advanced Industrial Science and Technology (AIST), Ikeda, Osaka 563-8577, Japan |
| |
| Abstract: | Nitrogen-doped diamond has been under investigation for its low effective work function, which is due to the negative electron affinity (NEA) produced after surface hydrogen termination. Diamond films grown by chemical vapor deposition (CVD) have been reported to exhibit visible light induced electron emission and low temperature thermionic emission. The physical mechanism and material-related properties that enable this combination of electron emission are the focus of this research. In this work the electron emission spectra of nitrogen-doped, hydrogen-terminated diamond films are measured, at elevated temperatures, with wavelength selected illumination from 340 nm to 450 nm. Through analysis of the spectroscopy results, we argue that for nitrogen-doped diamond films on metallic substrates, photo-induced electron generation at visible wavelengths involves both the ultra-nanocrystalline diamond and the interface between the diamond film and metal substrate. Moreover, the results suggest that the quality of the metal–diamond interface can substantially impact the threshold of the sub-bandgap photo-induced emission. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
