Synthesis and characterization of thermally evaporated Cu2SnSe3 ternary semiconductor |
| |
| Affiliation: | 1. LESIMS, Département de Physique, Faculté des Sciences, Université Badji Mokhtar – Annaba, BP. 12, 23200 Sidi Amar, Algeria;2. CIMAP, Centre de recherche sur les ions, les matériaux et la photonique, CEA, UMR 6252 CNRS, ENSICAEN, UCBN, 6 Boulevard du Maréchal Juin, 14050 Caen cedex, France;3. Nanotechnology Centre, University of Bahrain, PO Box 32038, Bahrain;4. Department of Physics, College of Science, University of Bahrain, PO Box 32038, Bahrain;5. LRPCSI, Faculté des Sciences, Université de Skikda, BP26 route El-Hadaek, 21000 Skikda, Algeria;6. LEREC, Département de Physique, Faculté des Sciences, Université Badji Mokhtar – Annaba, BP. 12, 23200 Sidi Amar, Algeria;1. Laboratory of Condensed Matter and Nanostructures (LMCN), Cadi-Ayyad University, Faculty of Sciences and Technology, Department of Applied Physics, Marrakech, Morocco;2. Laboratoire Procédés, Métrologie, Matériaux pour l’Energie et Environnement (LP2M2E), Cadi-Ayyad University, Faculty of Sciences and Techniques, Departement of Applied Physics, Marrakech, Morocco;3. Laboratoire Procédés, Matériaux et Énergie Solaire (PROMES-CNRS), Université de Perpignan, Rambla de la thermodynamique, Tecnosud, 66100 Perpignan Cedex, France;4. Département de Génie Physique, INSA de Toulouse, 135 Avenue de Rangueil, 31077 Toulouse cedex 4, France;1. Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Institute for Advanced Energy Materials, School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi''an 710119, China;2. College of Chemistry & Chemical Engineering, Yan''an University, Yan''an 716000, China;3. Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian 116023, China;1. Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, Shiga, Japan;2. College of Science and Engineering, Ritsumeikan University, Shiga, Japan |
| |
| Abstract: | Copper Tin Selenide (CuSnSe) powder was mechanically alloyed by high energy planetary ball milling, starting from elemental powders. Synthesis time and velocity have been optimized to produce Cu2SnSe3 materials. Thin films were prepared by thermal evaporation on Corning glass substrate at Ts = 300 °C. The structural, compositional, morphological and optical properties of the synthesized semiconductor have been analyzed by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and transmission electron microscopy. The analyzed powder exhibited a cubic crystal structure, with the presence of Cu2Se as a secondary phase. On the other hand, the deposited films showed a cubic Cu2SnSe3 ternary phase and extra peaks belonging to some binary compounds. Furthermore, optical measurements showed that the deposited layers have a relatively high absorption coefficient of 105 cm?1 and present a band gap of 0.94 eV. |
| |
| Keywords: | Mechanical alloying X-ray diffraction TEM |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
