High quality thick CVD diamond films homoepitaxially grown on (111)-oriented substrates |
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| Affiliation: | 1. Laboratoire des Sciences des Procédés et des Matériaux (LSPM), Université Paris 13, Sorbonne Paris Cité, CNRS, Villetaneuse 93430, France;2. Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, Academician Koptyug Ave., 3, Novosibirsk 630090, Russia;3. Groupe d''Etude de la Matière Condensée (GEMaC), Université Versailles St Quentin, CNRS, Versailles 78035, France;4. Novosibirsk State University, 630090 Novosibirsk, Russia;1. Laboratoire des Sciences des Procédés et des Matériaux (LSPM), Université Paris 13, Sorbonne Paris Cité, CNRS, 93430 Villetaneuse, France;2. Laboratoire Aimé Cotton, CNRS, Université Paris-Sud and ENS Cachan, 91405 Orsay, France;3. Department of Nuclear Solid-State Physics, University Leipzig, 04103 Leipzig, Germany;4. Leibniz-Institute of Surface Modification (IOM), Chemical Department, 04318 Leipzig, Germany;1. Diamond Research Group, Research Institute for Ubiquitous Energy Devices (UBIQEN), National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan;2. Wide Bandgap Materials Group, Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;1. Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150080, PR China;2. Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150080, PR China;1. Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, United States;2. Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824, United States;1. Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, United States;2. Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824, United States |
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| Abstract: | The development of diamond power electronic devices based on p–n junctions strongly relies on the ability to achieve efficient n-type doping which has so far been the limiting step. (111)-oriented diamond films offer the advantage of a higher activity and incorporation of dopants. In this respect, growing high-quality films by Plasma Assisted Chemical Vapour Deposition (PACVD) on this orientation is critical. Other applications such as those based on nitrogen-vacancy (NV) centres could also benefit from the availability of high-quality (111)-oriented substrates. Due to the preferential orientation of the NV bond along the < 111 > direction, higher emission intensity and easier alignment of the magnetic field are expected. However (111) CVD films are plagued by twinning and defects that are easily formed on this orientation. Good quality (111) CVD films have been obtained but only for low thicknesses (< 1 μm) and at extremely low growth rates.In this paper, diamond growth was carried out by high power PACVD on (111)-oriented high pressure high temperature substrates prepared from octahedral-shape crystals. It was found that under conditions of high temperature and low methane concentration, the growth rate in the < 100 > direction is almost completely inhibited which ensures that penetration twins cannot develop. In this case smooth films with a thickness over 100 μm were successfully obtained at 6 μm/h. Although the crystalline quality is still below that of conventional (100) CVD films, the growth of such thick (111) CVD films opens the way to their integration into electronics applications. |
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