Localized DLC etching by a non-thermal atmospheric-pressure helium plasma jet in ambient air |
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| Affiliation: | 1. Department of Electronic & Photonic Systems Engineering, Kochi University of Technology, 185 Miyanokuchi, Tosayamada, Kami, Kochi 782-8502, Japan;2. Center for Nanotechnology, Kochi University of Technology, 185 Miyanokuchi, Tosayamada, Kami, Kochi 782-8502, Japan;1. Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan;2. Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan;3. University of Hyogo, 3-1-2 Koto, Kamigori-cho, Ako-gun, Hyogo 678-1205, Japan;4. Tokyo National College of Technology, 1220-2 Kunugida, Hachiouji, Tokyo 193-0997, Japan |
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| Abstract: | Using a versatile atmospheric-pressure helium plasma jet, diamond-like carbon (DLC) films were etched in ambient air. We observed that the DLC films are etched at a nominal rate of around 60 nm/min in the treated area (230 μm in diameter) during a 20-min exposure. The etching rate increased after the initial 10-min exposure. During this period, the flat DLC surface was structurally modified to produce carbon nanostructures with a density of ~ 2.4 × 1011 cm− 2. With this increase in surface area, the etching rate increased. After 20 min, the DLC film had a circular pattern etched into it down to the substrate where silicon nanostructures were observed with sizes varying from 10 nm to 1 μm. The initial carbon nanostructure formation is believed to involve selective removal of the sp2-bonded carbon domains. The carbon etching results from the formation of reactive oxygen species in the plasma. |
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