TEM interfacial characterization of CVD diamond film grown on Al inter-layered steel substrate |
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| Affiliation: | 1. College of Material Science and Engineering, Key Laboratory of Advanced Structural Materials, Ministry of Education, Changchun University of Technology, Changchun 130012, China;2. Shenyang National Lab of Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China;3. Department of Mechanical Engineering, University of Saskatchewan, Saskatoon, SK S7N 5A9, Canada;4. Plasma Physics Laboratory, University of Saskatchewan, Saskatoon, SK S7N 5E2, Canada;1. Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, S7N 5A9, Canada;2. Plasma Physics Laboratory, University of Saskatchewan, 116 Science Place, Saskatoon, SK S7N 5E2, Canada;3. Canadian Light Source, University of Saskatchewan, 44 Innovation Boulevard, Saskatoon, SK, S7N 2V3, Canada;1. Department of Physical Electronics and Informatics, Graduate School of Engineering, Osaka City University, Sugimoto 3-3-138 Sumiyoshi-ku, Osaka 558-8585, Japan;2. Center for Device Thermography and Reliability (CDTR), University of Bristol, Bristol BS8 1TL, United Kingdom;3. Department of Electrical and Electronic Engineering, Saga University, Honjo-machi 1, Saga 840-8502, Japan;4. Adamant Namiki Precision Jewel Co., Ltd., Shinden 3-8-22 Adachi-ku, Tokyo 123-8511, Japan;1. Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan;2. Advanced Materials Laboratory, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan;1. Harbin Institute of Technology, 92 Xidazhi Str., 150001 Harbin, PR China;2. General Physics Institute of Russian Academy of Sciences, Vavilov Str. 38, 119991 Moscow, Russia;3. National Research Nuclear University “MEPhI”, Kashirskoe Shosse 31, 115409 Moscow, Russia;4. Institute of Radio Engineering and Electronics RAS, 141190 Fryazino, Russia;5. National Research University of Electronic Technology, Zelenograd, 124498 Moscow, Russia |
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| Abstract: | Al interlayer is precoated on pure iron or steel substrates for diamond film deposition. Microstructures and compositions around the interfacial region of diamond film/Al interlayer/substrates have been comprehensively analyzed by transmission electron microscopy (TEM). Using only a simple Al thin layer is not sufficient, as the integrity of the Al interlayer is easily destroyed during scratching pretreatment. Consequently, the continuity of diamond film is damaged and local carburization corrosion occurs on the substrate. The carburization products primarily consist of voluminous graphite and a large number of fine particles of iron carbide are dispersed at the interfacial region, inducing deteriorated interfacial adhesion. To solve it, an interdiffusion pretreatment of Al interlayer under annealing vacuum is required. The results show that a Fe–Al alloy facilitated the formation of a protective Al oxide layer and improved the diamond film deposition. However, the surface aluminizing process needs to be further optimized, as indicated by a comparison with the diamond deposition directly on Fe–Cr–Al bulk alloy substrate. |
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