Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power |
| |
| Affiliation: | 1. School of Physics and Materials Science, Anhui University, Hefei 230601, PR China;2. Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061, PR China;1. Siberian Federal University, Krasnoyarsk, Russia;2. L.V. Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, 660036 Krasnoyarsk, Russia;1. Instituto de Fisica, Universidade Federal de Uberlandia, CEP38408-902 Uberlandia, Minas Gerais, Brazil;2. CIMAP – Centre de recherche sur les Ions, les Matériaux et la Photonique UMR 6252 CEA-CNRS-ENSICAEN-Université de Caen, 14050 CAEN Cedex 4, France;3. Instituto de Física de São Carlos, Universidade de São Paulo, USP, CEP 13560-970 São Carlos, SP, Brazil;1. Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, Shanxi, PR China;2. Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024, Shanxi, PR China;3. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, Shanxi, PR China;4. College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024, Shanxi, PR China |
| |
| Abstract: | High-k gate dielectric HfO2 thin films have been deposited on Si and quartz substrate by radio frequency magnetron sputtering. The structural and optical properties of HfO2 thin films related to deposition power are investigated by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), ultraviolet–visible spectroscopy (UV–Vis), and spectroscopic ellipsometry (SE). Results confirmed by XRD have shown that the as-deposited HfO2 thin films are not amorphous state but in monoclinic phase, regardless of deposition power. Analysis from FTIR indicates that an interfacial layer has been formed between the Si substrate and the HfO2 thin film during deposition. AFM measurements illustrate that the root mean square (RMS) of the as-deposited HfO2 thin films’ surface demonstrates an apparent reduction with the increase of deposition. Combined with UV–Vis and SE measurements, it can be noted reduction in band gap with an increase in power has been observed. Additionally, increase in refractive index (n) has been confirmed by SE. |
| |
| Keywords: | High-k gate dielectric Optical properties Sputtering Band gap |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
