Large area deposition of boron doped nano-crystalline diamond films at low temperatures using microwave plasma enhanced chemical vapour deposition with linear antenna delivery |
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| Affiliation: | 1. Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., Prague 8, Czech Republic;2. Institute of Applied Physics and Mathematics, University of Pardubice, Studentska 95, 53210 Pardubice, Czech Republic;3. Nuclear Physics Institute, Academy of Sciences of the Czech Republic, v.v.i., Rež near Prague, Czech Republic;1. Laboratoire des Sciences des Procédés et des Matériaux (LSPM), CNRS, Université Paris 13, Sorbonne Paris Cité, 93430 Villetaneuse, France;2. Groupe d''Etude de la Matière Condensée (GEMaC), CNRS, Université Versailles St-Quentin-en-Yvelines (UVSQ) Université Paris Saclay, 45 avenue des Etats Unis, 78035 Versailles Cedex, France |
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| Abstract: | We report on the preparation and characterisation of boron (B) doped nano-crystalline diamond (B-NCD) layers grown over large areas (up to 50 cm × 30 cm) and at low substrate temperatures (< 650 °C) using microwave plasma enhanced linear antenna chemical vapour deposition apparatus (MW-LA-PECVD). B-NCD layers were grown in H2/CH4/CO2 and H2/CH4 gas mixtures with added trimethylboron (TMB). Layers with thicknesses of 150 nm to 1 μm have been prepared with B/C ratios up to 15000 ppm over a range of CO2/CH4 ratios to study the effect of oxygen (O) on the incorporation rate of B into the solid phase and the effect on the quality of the B-NCD with respect to sp3/sp2 ratio. Experimental results show the reduction of boron acceptor concentration with increasing CO2 concentration. Higher sp3/sp2 ratios were measured by Raman spectroscopy with increasing TMB concentration in the gas phase without CO2. Incorporation of high concentrations of B (up to 1.75 × 1021 cm3) in the solid is demonstrated as measured by neutron depth profiling, Hall effect and spectroscopic ellipsometry. |
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