| 阵列化LAPS的结构设计及特性研究 |
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| 引用本文： | 戴春祥,孙颖,朱大中.阵列化LAPS的结构设计及特性研究[J].固体电子学研究与进展,2008,28(4). |
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| 作者姓名： | 戴春祥 孙颖 朱大中 |
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| 作者单位： | 浙江大学信息与电子工程学系,杭州,310027 |
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| 基金项目： | 国家自然科学基金
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| 摘 要： | 为了降低阵列化光寻址电位传感器(LAPS Array)非敏感区域的噪声干扰,提出一种新的结构,对非敏感区域进行重掺杂,并在其表面生长厚氧化层。用同样的激光束照射,非敏感区域的光电流比敏感区域降低20dB以上。针对阵列化LAPS的特点,研究了电极位置变化、光源强度变化对测量结果的影响。给出了阵列化LAPS在不同应用中电极位置设置的建议,同时表明用LED作为阵列化LAPS的激励光源是合理的。
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| 关 键 词： | 阵列化光寻址电位传感器 噪声抑制 P+扩散 归一化 |
Structure Design and Characteristics Research of LAPS Array |
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| DAI Chunxiang,SUN Ying,ZHU Dazhong.Structure Design and Characteristics Research of LAPS Array[J].Research & Progress of Solid State Electronics,2008,28(4). |
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| Authors: | DAI Chunxiang SUN Ying ZHU Dazhong |
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| Affiliation: | DAI Chunxiang SUN Ying ZHU Dazhong (Department of Information Science , Electronic Engineering,Zhejiang University,Hangzhou,310027,CHN) |
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| Abstract: | For reducing the noise interference of non-sensitive area,a novel structure of Light-Addressable Potentiometric Sensor Array(LAPS Array) is proposed. With heavy doped in non-sensitive area and thick dioxide on corresponding surface,the noise rejection of LAPS Array is improved. Using the same stimulated light,the photocurrent amplitude of non-sensitive area is much smaller than sensitive area (less than-20 dB). In addition,the impact of electrode position and light intensity were researched. The results ind... |
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| Keywords: | LAPS Array noise rejection P+ diffusion normalized |
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