| 离子注入硅的线源非相干光瞬时退火温度计算 |
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| 引用本文： | 罗益民. 离子注入硅的线源非相干光瞬时退火温度计算[J]. 微细加工技术, 1993, 0(4): 72-76 |
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| 作者姓名： | 罗益民 |
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| 作者单位： | 中南工业大学应用物理系 长沙市 |
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| 摘 要： | 本文利用高温模型,计算了在我们的实验条件下对离子注入硅进行线源非相干光瞬时退火的退火温度,并与实验结果比较,两者符合得较好。
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| 关 键 词： | 离子注入 光退火 温度计算 硅 掺杂 |
TEMPERATURE CALCULATION IN TRANSIENT ANNEALING RESEARCH OF ION IMPLANTED SILICON USING AN INCOHERENT LIGHT LINE SOURCE |
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| Luo Yiming. TEMPERATURE CALCULATION IN TRANSIENT ANNEALING RESEARCH OF ION IMPLANTED SILICON USING AN INCOHERENT LIGHT LINE SOURCE[J]. Microfabrication Technology, 1993, 0(4): 72-76 |
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| Authors: | Luo Yiming |
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| Abstract: | In this thesis,an isothermal model is used to calculate temperature in transient annealing of ion implanted silicon using an incoherent light line source,a comparison is done between calculating and experimental results.lt is found that both are approximately agreeable. |
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| Keywords: | ion implantation light transient annealing temperature calculation |
| 本文献已被 CNKI 维普 等数据库收录！ |
