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SAW器件用金刚石基c轴取向LiNbO3压电薄膜的制备
引用本文:王新昌,田四方,贾建峰,王前进. SAW器件用金刚石基c轴取向LiNbO3压电薄膜的制备[J]. 材料科学与工程学报, 2010, 28(6)
作者姓名:王新昌  田四方  贾建峰  王前进
作者单位:郑州大学物理工程学院材料物理教育部重点实验室,河南,郑州,450052;浙江大学硅材料国家重点实验室,浙江,杭州,310027;郑州大学物理工程学院材料物理教育部重点实验室,河南,郑州,450052
基金项目:国家自然科学基金资助项目(50702051); 硅材料国家重点实验室开放课题资助项目(SKL2008-4)
摘    要:采用脉冲激光沉积技术,在以c轴取向ZnO作为缓冲层的金刚石/硅基底上制备出了结晶良好的高c轴取向LiNbO3薄膜。利用X射线衍射对薄膜的结晶质量和c轴取向性进行了研究,结果表明制得的LiNbO3薄膜具有高度c轴取向且结晶质量良好。采用扫描电子显微镜和原子力显微镜对薄膜的表面形貌进行了分析,发现薄膜表面光滑,晶粒尺寸均匀,薄膜表面粗糙度约为20nm。

关 键 词:LiNbO3压电薄膜  金刚石/硅基底  脉冲激光沉积

Growth of Highly c-axis Oriented LiNbO_3 Films on Diamond Substrates for SAW Devices
WANG Xin-chang,TIAN Si-fang,JIA Jian-feng,WANG Qian-jin. Growth of Highly c-axis Oriented LiNbO_3 Films on Diamond Substrates for SAW Devices[J]. Journal of Materials Science and Engineering, 2010, 28(6)
Authors:WANG Xin-chang  TIAN Si-fang  JIA Jian-feng  WANG Qian-jin
Affiliation:WANG Xin-chang(1,2),TIAN Si-fang1,JIA Jian-feng1,WANG Qian-jin1(1.Key Laboratory of Material Physics , Department of Physics,Zhengzhou University,Zhengzhou 450052,China,2.State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)
Abstract:Highly c-axis oriented LiNbO_3 thin films have been grown on diamond/Si substrates coated with c-axis oriented ZnO buffer layer by pulsed laser deposition.X-ray diffractometry(XRD) was applied to characterize the quality and c-axis orientation of the films.The results show that LiNbO_3 thin films have excellent crystalline structure and highly c-axis oriented texture.The scanning electron microscopy(SEM) and atomic force microscopy(AFM) show that the achieved films have smooth surfaces and uniform grains.Th...
Keywords:LiNbO3 piezoelectric films  diamond/Si substrate  pulsed laser deposition  
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