Abstract: | Proton irradiation-based degradation characteristics for molecular beam epitaxy (MBE) grown Ga0·51In0·49P/GaAs single-junction tandem solar cells of n/p configuration are reported. The cells were irradiated with 3-MeV protons up to fluences of 1013 cm?2. The cells were characterized with current–voltage (I–V) measurements at AMO conditions, and with spectral measurements. The damage coefficient for the GaAs cells was calculated using numerical modelling by the PC-1D program, and the result was compared with the InP damage coefficient. By using the ‘displacement damage dose’ approach, the degradation characteristics were compared with the published data for InP and GaAs/Ge solar cells. In addition, these MBE results were compared with the radiation behavior of metal-organic chemical vapor deposition (MOCVD)-grown Ga0·51In0·49P/GaAs single-, and double-junction solar cells of p/n configuration. © 1998 John Wiley & Sons, Ltd. |