Radiation resistance of MBE-grown GaInP/GaAs-based solar cells

Proton irradiation-based degradation characteristics for molecular beam epitaxy (MBE) grown Ga_0·51In_0·49P/GaAs single-junction tandem solar cells of n/p configuration are reported. The cells were irradiated with 3-MeV protons up to fluences of 10¹³ cm⁻². The cells were characterized with current–voltage (I–V) measurements at AMO conditions, and with spectral measurements. The damage coefficient for the GaAs cells was calculated using numerical modelling by the PC-1D program, and the result was compared with the InP damage coefficient. By using the ‘displacement damage dose’ approach, the degradation characteristics were compared with the published data for InP and GaAs/Ge solar cells. In addition, these MBE results were compared with the radiation behavior of metal-organic chemical vapor deposition (MOCVD)-grown Ga_0·51In_0·49P/GaAs single-, and double-junction solar cells of p/n configuration. © 1998 John Wiley & Sons, Ltd.