| 6H-SiC单晶的生长与缺陷 |
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| 引用本文： | 胡小波,徐现刚,王继扬,韩荣江,董捷,李现祥,蒋民华.6H-SiC单晶的生长与缺陷[J].硅酸盐学报,2004,32(3):248-250,254. |
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| 作者姓名： | 胡小波 徐现刚 王继扬 韩荣江 董捷 李现祥 蒋民华 |
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| 作者单位： | 山东大学,晶体材料国家重点实验室,济南,250100;山东大学,晶体材料国家重点实验室,济南,250100;山东大学,晶体材料国家重点实验室,济南,250100;山东大学,晶体材料国家重点实验室,济南,250100;山东大学,晶体材料国家重点实验室,济南,250100;山东大学,晶体材料国家重点实验室,济南,250100;山东大学,晶体材料国家重点实验室,济南,250100 |
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| 基金项目： | 国家 8 63计划，国家自然科学基金 (60 0 2 5 40 9)资助项目 |
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| 摘 要： | 采用升华法，在一定的温度、气体压力和流量的条件下，生长了尺寸ф50．8mm的6H—SiC单晶。利用光学显微术观察了原生晶体的表面形貌，发现了微管在晶体表面的露头点具有明显的多个螺位错成核特征。采用透射模式对抛光晶片进行观察，发现了SiC晶体内的典型缺陷，如：负晶、微管、碳颗粒等，并对它们的形成机理进行了讨论。
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| 关 键 词： | 6H-碳化硅 微管 负晶 缺陷 |
| 文章编号： | 0454-5648(2004)03-0248-03 |
GROWTH AND DEFECTS OF 6H-SiC MONOCRYSTALS |
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| HU Xiaobo,XU Xiangang,WANG Jiyang,HAN Rongjiang,DONG Jie,LI Xianxiang,JIANG Minhua.GROWTH AND DEFECTS OF 6H-SiC MONOCRYSTALS[J].Journal of The Chinese Ceramic Society,2004,32(3):248-250,254. |
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| Authors: | HU Xiaobo XU Xiangang WANG Jiyang HAN Rongjiang DONG Jie LI Xianxiang JIANG Minhua |
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| Abstract: | HSiC monocrystals with the diameter of 50.8 mm were synthesized by sublimation method. The surface morpho-(logy) of as-grown SiC crystal was observed by optical microscopy. It is found that outcrops of micropipes on the crystal surface possess remarkable feature of double or multiple screw dislocations. In addition, polished SiC wafer was also examined by optical microscopy with transmission mode, and it is found that there are some typical defects, such as negative crystals, micropipes, carbon particles in SiC crystals. The formation mechanisms of these defects are discussed. |
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| Keywords: | Hsilicon carbide micropipe negative crystal defect |
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