| 2.5kA/1.2kV两单元IGBT模块 |
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| 引用本文： | Ayumi Maruta. 2.5kA/1.2kV两单元IGBT模块[J]. 电力电子技术, 2009, 43(10) |
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| 作者姓名： | Ayumi Maruta |
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| 作者单位： | 三菱电机功率器件福冈制作所,福冈819-0192,日本 |
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| 摘 要： | 介绍一种工业用2.5 kA/1.2 kV两单元IGBT模块.在该大电流器件中,P端到N端的内部连线电感非常小.半导体硅片的巧妙布局有效地提高了模块的散热能力,采用铝底板直接连接绝缘基板来提高热循环能力.对于这种底板面积较大的器件,为了获得更好的底板和散热片之间的热接触.底板被分成几段.2.5 kA/1.2 kV两单元IGBT模块的封装同样适用于1.8 kA/1.7 V两单元IGBT模块.
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| 关 键 词： | 模块/绝缘栅双极型晶体管 载流子储存的沟槽栅双极晶体管 风能 |
2.5 kA/1.2 kV Dual IGBT Module |
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| Ayumi Maruta,Mitsuharu Tabata. 2.5 kA/1.2 kV Dual IGBT Module[J]. Power Electronics, 2009, 43(10) |
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| Authors: | Ayumi Maruta Mitsuharu Tabata |
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| Affiliation: | Ayumi Maruta,Mitsuharu Tabata(Power Device Works,Mitsubishi Electric Corporation,Fukuoka 819-0192,Japan) |
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| Abstract: | A 2.5 kA/1.2 kV dual IGBT module for industrial use is developed.Small inductance internal wiring structure from P to N terminal is developed for the large current device.Semiconductor chips are arranged for the purpose of increasing the cooling capability.An aluminium base plate with direct bonded insulation substrate is used for the purpose of increasing thermal cycling capability.To achieve a better thermal contact between base plate and cooling fin for the large base area device,the base plate is separa... |
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| Keywords: | module/insulated gate bipolar transistor carrier stored trench bipolar transistor wind power |
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