AC hot-carrier effects in MOSFETs with furnaceN2O-nitrided gate oxides |
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| Authors: | Lo G.Q. Ahn J. Kwong D.-L. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX; |
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| Abstract: | AC hot-carrier effects in n-MOSFETs with thin (~85 Å) N2O-nitrided gate oxides have been studied and compared with control devices with gate oxides grown in O2. Results show that furnace N2O-nitrided oxide devices exhibit significantly reduced AC-stress-induced degradation. In addition, they show weaker dependences of device degradation on applied gate pulse frequency and pulse width. Results suggest that the improved AC-hot-carrier immunity of the N2O-nitrided oxide device may be due to the significantly suppressed interface state generation and neutral electron trap generation during stressing |
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