| 一种全新的基于小电流过趋热效应的峰值结温电学测试方法 |
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| 引用本文： | 朱阳军,苗庆海,张兴华,韩郑生. 一种全新的基于小电流过趋热效应的峰值结温电学测试方法[J]. 半导体学报, 2009, 30(9): 094005-4 |
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| 作者姓名： | 朱阳军 苗庆海 张兴华 韩郑生 |
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| 基金项目： | 国家自然科学基金； 中国科学院创新基金 |
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| 摘 要： | It has been a scientific and technological problem in the field of microelectronics for several decades that the electrical method is used to measure the peak junction temperature of power transistors. Based on the excessive thermotaxis effect of low current, a novel electrical measurement method of the peak junction temperature is presented in this paper. The method is called the thermal spectrum analysis method of transistors, simply designated TSA （thermal spectrum analysis method）. Unlike the common method which uses a single measuring current, TSA uses multi-step currents to measure temperature-sensitive parameters. Based on the excessive thermotaxis effect of low current and the sub-transistor parallel model, the peak junction temperature and non-uniform property of junction temperature distribution are analyzed successfully.
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| 关 键 词： | 峰值结温 测量方法 低电流 过度 功率晶体管 基础 微电子领域 测量电流 |
| 收稿时间： | 2009-03-23 |
| 修稿时间： | 2009-04-20 |
A novel electrical measurement method of peak junction temperature based on the excessive thermotaxis effect of low current |
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| Zhu Yangjun,Miao Qinghai,Zhang Xinghua and Han Zhengsheng. A novel electrical measurement method of peak junction temperature based on the excessive thermotaxis effect of low current[J]. Chinese Journal of Semiconductors, 2009, 30(9): 094005-4 |
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| Authors: | Zhu Yangjun Miao Qinghai Zhang Xinghua Han Zhengsheng |
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| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;School of Physics, Shandong University, Jinan 250100, China;School of Physics, Shandong University, Jinan 250100, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | It has been a scientific and technological problem in the field of microelectronics for several decades that the electrical method is used to measure the peak junction temperature of power transistors. Based on the excessive thermotaxis effect of low current, a novel electrical measurement method of the peak junction temperature is presented in this paper. The method is called the thermal spectrum analysis method of transistors, simply designated TSA (thermal spectrum analysis method). Unlike the common method which uses a single measuring current, TSA uses multi-step currents to measure temperature-sensitive parameters. Based on the excessive thermotaxis effect of low current and the sub-transistor parallel model, the peak junction temperature and non-uniform property of junction temperature distribution are analyzed successfully. |
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| Keywords: | peak junction temperature multi-step current excessive thermotaxis effect of low current power transistor |
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