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A Study on the Effect of Incorporating Nitrogen Ions on Titanium Disilicide Thin Film Formation for ULSI Applications |
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| Authors: | C. W. Lim A. J. Bourdillon H. Gong S. K. Lahiri K. L. Pey K. H. Lee |
| Affiliation: | (1) Faculty of Science, Department of Materials Science, National University of Singapore, S, 1A#02-07, Lower Kent Ridge Road, Singapore, 119260;(2) Institute of Materials Research & Engineering (IMRE), Microelectronics Materials, Processes & Packaging, National University of Singapore, Blk S7, Level 3, Singapore, 119260;(3) Department of Research and Development, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore, 738406 |
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