| 电子束和接触式曝光机的匹配和混合曝光 |
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| 引用本文： | 刘明,陈宝钦,刘小伟,尉林鹏,吴德馨.电子束和接触式曝光机的匹配和混合曝光[J].功能材料与器件学报,2000,6(4):416-419. |
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| 作者姓名： | 刘明 陈宝钦 刘小伟 尉林鹏 吴德馨 |
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| 作者单位： | 中国科学院微电子中心,北京,100029 |
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| 摘 要： | Ｉ－线光致抗蚀剂可以同时被电子束和光学曝光系统曝光，在５０ＫＶ加速电压下，其曝光剂量为５０－１００μＣ／ｃｍ＾２，曝光后在０．７％ＮａＯＨ溶液内显影１ｍｉｎ。其灵敏度比ＰＭＭＡ快５倍，分辨率为０．５μｍ。采用两种方法制备了ＧａＡｓＰＨＥＭＴ，首先，用Ｉ线光致抗蚀剂，源、漏及栅的全部都采用电子束曝光，制备了０．５μｍ栅长的ＧａＡｓＰＨＥＭＴ。将源、漏及栅分割成两部分，其中的精细部分由电子束曝光，其余
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| 关 键 词： | I－线光致抗蚀剂 电子束 接触式曝光机 混合曝光 |
Electron beam/optical stepper mixes and matches lithography |
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| LIU Ming,CHEN Bao-qin,LUI Xiao-wei,WEI Lin-peng,WU De-xin.Electron beam/optical stepper mixes and matches lithography[J].Journal of Functional Materials and Devices,2000,6(4):416-419. |
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| Authors: | LIU Ming CHEN Bao-qin LUI Xiao-wei WEI Lin-peng WU De-xin |
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| Abstract: | The I-line photo-resist is used as resist exposed by both E-beam and optical system. It is exposed in beam system at 50KV, with dose between 50-100μC/cm2 and developed for 1min. in 0.7% NaOH solution. The sensitivity of I-line photo-resist is 5 times than that of PMMA. Its resolution can get to 0.5μm. Two methods are employed to fabricate GaAs PHEMT. First, all of source and drain as well as gate was exposed by E-beam using I-line photo-resists. The GaAs PHEMT with 0.5μm gate length is fabricated by this way. Second, E-beam lithography is only used to define the fine part of source and drain as well as gate. All the other parts are patterned on a conventional contact optical system. The GaAs PHEMT with 0.25μm gate length is fabricated by this way. |
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| Keywords: | I-line photoresist Gate length Mix-and-match lithography |
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