| 集成双极晶体管基区表面电流的准二维模型及其参数的提取 |
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| 引用本文： | 庄奕琪,孙青.集成双极晶体管基区表面电流的准二维模型及其参数的提取[J].西安电子科技大学学报,1988(4). |
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| 作者姓名： | 庄奕琪 孙青 |
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| 作者单位： | 西北电讯工程学院微电子研究所，西北电讯工程学院微电子研究所 |
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| 摘 要： | 考虑到少子准费米能级沿基区表面的非均匀分布,建立了集成双极晶体管基区表面电流的准二维模型。利用栅控晶体管作为测试结构,提取出了主要的基区表面参数。
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| 关 键 词： | 双极晶体管 表面复合 模型 基区表面电流 |
The quasi-two dimensional model and the extraction of its parametters for the base surface current in integrated bipolar transistors |
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| Zhuang Yiqi Sun Qing.The quasi-two dimensional model and the extraction of its parametters for the base surface current in integrated bipolar transistors[J].Journal of Xidian University,1988(4). |
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| Authors: | Zhuang Yiqi Sun Qing |
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| Affiliation: | Zhuang Yiqi Sun Qing |
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| Abstract: | A quasi-two dimensional model of the base surface current in integratedbipolar transistors is developed on the basis of consideration of a late-ral variation of the minority carrier quasi-fermi level along the base sur-face.The model parameters are extracted with the aid of agate-controlledtransistor structure. |
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| Keywords: | bipolar transistor surface recombination modeling base surface current |
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