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A 0.8-μm BiCMOS ATM switch on an 800 Mb/s asynchronous bufferedbanyan network
Authors:Sakaue   K. Shobatake   Y. Motoyama   M. Kumaki   Y. Takatsuka   S. Tanaka   S. Hara   H. Matsuda   K. Kitaoka   S. Noda   M. Niitsu   Y. Norishima   M. Momose   H. Maeguchi   K. Ishibe   M. Shimizu   S. Kodama   T.
Affiliation:Toshiba Microelectron. Corp., Kawasaki;
Abstract:An experimental element switch LSI for asynchronous transfer mode (ATM) switching systems was realized using 0.8-μm BiCMOS technology. The element switch transfers cells asynchronously when used in a buffered banyan network. Three key features of the element switch architecture are CASO buffers to increase the throughput, a synchronization technique called SCDB (synchronization in a clocked dual port buffer) to make possible asynchronous cell transmission on the element switches with simple hardware, and an implementation technique for virtual cut through, called CELL-BYPASS, which lowers the latency. An implementation of elastic store is proposed to achieve high-speed synchronization with simple hardware. The element switch LSI adopts an emitter-coupled-logic (ECL) interface. The maximum operation frequency of the element switch LSI is 200 MHz (typical)
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