| Optical Noninvasive Diagnostic of Semiconductor Devices by Using Laser Beam Probe |
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| 引用本文： | JIANGJianping ZHOUMinkang 等. Optical Noninvasive Diagnostic of Semiconductor Devices by Using Laser Beam Probe[J]. 半导体光子学与技术, 1996, 2(1): 66-71 |
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| 作者姓名： | JIANGJianping ZHOUMinkang 等 |
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| 作者单位： | TsinghuaUniversity,Beijing100084,CHN |
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| 摘 要： | The optical noninvasive diagnostic of characteristic of silicon semiconductor de-vices by using a InGaAsP/InP semiconductor laser as an optical probe is reported.The princi-ple of experimental method is based on the dependence of the optical refractive index on the carrier charge density in the active region of devices and detection of variation of refractive index by two laser beam interferometric techniques.
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| 关 键 词： | 光学诊断 光学探测 光学系统 半导体装置 交光互作用 激光束探测 |
| 收稿时间： | 1995-06-05 |
Optical Noninvasive Diagnostic of Semiconductor Devices by Using Laser Beam Probe |
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| JIANG Jianping,ZHOU Minkang,SUN Chengcheng, HE Shufang, XE Zhizhi. Optical Noninvasive Diagnostic of Semiconductor Devices by Using Laser Beam Probe[J]. Semiconductor Photonics and Technology, 1996, 2(1): 66-71 |
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| Authors: | JIANG Jianping ZHOU Minkang SUN Chengcheng HE Shufang XE Zhizhi |
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| Abstract: | The optical noninvasive diagnostic of characteristic of silicon semiconductor devices by using a InGaAsP/InP semiconductor laser as an optical probe is reported. The principle of experimental method is based on the dependence of the optical refractive index on the carrier charge density in the active region of devices and detection of variation of refractive index by two laser beam interferometric techniques. |
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| Keywords: | Optical Diagnostic Optical Probe Optics Interaction Optical Systems |
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