| InAs/GaSb应变超晶格红外调制光谱研究 |
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| 引用本文： | 申晨,折伟林,李乾,邢伟荣,晋舜国,刘铭.InAs/GaSb应变超晶格红外调制光谱研究[J].红外,2019,40(2):14-18. |
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| 作者姓名： | 申晨 折伟林 李乾 邢伟荣 晋舜国 刘铭 |
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| 作者单位： | 华北光电技术研究所,北京,100015;华北光电技术研究所,北京,100015;华北光电技术研究所,北京,100015;华北光电技术研究所,北京,100015;华北光电技术研究所,北京,100015;华北光电技术研究所,北京,100015 |
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| 摘 要： | 在用步进扫描傅里叶变换红外(Fourier Transform Infrared, FTIR)调制光致发光(Photoluminescence, PL)光谱仪进行测试时，基于FTIR的优势，并结合PL无损、灵敏度高、简单的优点，通过减弱背景干扰来提高信号强度。研究了背景噪声、杂质能级和温度对InAs/GaSb应变超晶格材料的发射峰强度及位置的影响，并通过改变测试参数，总结出了针对不同材料的测试方法。这项研究结果对InAs/GaSb应变超晶格材料的外延生长及后续加工具有参考价值。
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| 关 键 词： | InAs/GaSb应变超晶格材料 光致发光光谱 截止波长 分子束外延 |
| 收稿时间： | 2019/1/2 0:00:00 |
| 修稿时间： | 2019/1/17 0:00:00 |
Research on Infrared Modulation Photoluminescence Spectroscopy for InAs/GaSb Superlattice |
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| Shen Chen,SHE Wei-lin,LI Qian,XING Wei-rong,JIN Shun-guo and LIU Ming.Research on Infrared Modulation Photoluminescence Spectroscopy for InAs/GaSb Superlattice[J].Infrared,2019,40(2):14-18. |
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| Authors: | Shen Chen SHE Wei-lin LI Qian XING Wei-rong JIN Shun-guo and LIU Ming |
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| Affiliation: | North China Research Institute of Electro-optics,North China Research Institute of Electro-optics,North China Research Institute of Electro-optics,North China Research Institute of Electro-optics,North China Research Institute of Electro-optics,North China Research Institute of Electro-optics |
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| Abstract: | When the step scanning Fourier Transform Infrared (FTIR) modulation Photoluminescence Spectroscopy (PL) is used for measurement, the background disturbance is eliminated by combining the superiority of FTIR with the advantages such as non-destruction, high sensitivity and convenient of PL, so as to enhance signal intensity. The influences of background noise, impurity level and temperature on the emission intensity and location in InAs/GaSb strain superlattice material are studied. By changing the measurement parameters, different measurement methods are summarized. The research results are of referential value to the epitaxy of InAs/GaSb strain superlattice materials and the subsequent processing of them. |
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| Keywords: | InAs/GaSb superlattice photoluminescence spectrum cut-off wavelength molecular beam epitaxy |
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