| 分子束外延硅基碲镉汞材料技术研究现状 |
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| 引用本文： | 高达,王经纬,王丛,李震,吴亮亮,刘铭. 分子束外延硅基碲镉汞材料技术研究现状[J]. 红外, 2019, 40(8): 15-18 |
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| 作者姓名： | 高达 王经纬 王丛 李震 吴亮亮 刘铭 |
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| 作者单位： | 华北光电技术研究所,北京,100015;华北光电技术研究所,北京,100015;华北光电技术研究所,北京,100015;华北光电技术研究所,北京,100015;华北光电技术研究所,北京,100015;华北光电技术研究所,北京,100015 |
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| 摘 要： | 目前，高性能大面阵中波及短波红外探测器已经得到了越来越多的应用。材料参数控制精确、材料质量良好的碲镉汞材料是获得高质量碲镉汞探测器的先决条件。报道了华北光电技术研究所在分子束外延(Molecular Beam Epitaxy, MBE)生长硅基中波及短波碲镉汞材料方面的最新研究进展，并介绍了现阶段MBE生长碲镉汞材料的研究现状。
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| 关 键 词： | 硅基碲镉汞 分子束外延 材料性能 |
| 收稿时间： | 2019-07-12 |
| 修稿时间： | 2019-07-27 |
Research Status of Si-based HgCdTe Material Technology Grown by Molecular Beam Epitaxy |
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| Gao D,Wang Jingwei,Wang Cong,Li Zhen,Wu Liangliang and Liu Ming. Research Status of Si-based HgCdTe Material Technology Grown by Molecular Beam Epitaxy[J]. Infrared, 2019, 40(8): 15-18 |
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| Authors: | Gao D Wang Jingwei Wang Cong Li Zhen Wu Liangliang Liu Ming |
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| Affiliation: | North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics |
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| Abstract: | At present, high-performance mid-wave and short-wave infrared detectors with large array size have been used more and more widely. Mercury cadmium telluride(HgCdTe)material with precise control of material parameters and good material quality is a prerequisite for obtaining high-quality HgCdTe detectors. The latest research progress of silicon-based mid-wave and short-wave infrared HgCdTe materials grown by molecular beam epitaxy (MBE) in North China Research Institute of Electro-Optics is reported, and the current research status of MBE-grown HgCdTe materials is introduced. |
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| Keywords: | Si-based HgCdTe MBE material property |
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