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Mechanism of laser assisted field evaporation from insulating oxides |
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| Authors: | Tsukada M Tamura H McKenna K P Shluger A L Chen Y M Ohkubo T Hono K |
| Affiliation: | a WPI-AIMR, Tohoku University, 2-1-1 Katahira, Aobaku, Sendai, Japan b Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, UK c Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-0047, Japan d National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047, Japan |
| Abstract: | To explain the recent successful three-dimensional atom probe (3DAP) analyses of insulating oxides by laser assisted field evaporation, we investigated the mechanism of the laser-induced field evaporation of oxides by ab initio calculations. The calculated potential energy surfaces (PESs) for the ground and excited states indicated that the activation barrier height for field evaporation is substantially reduced by the accumulation of holes near the tip apex. This would make the direct electronic excitation possible to promote field evaporation along with thermal excitation. These theoretical calculations are supported by experimental observations. |
| Keywords: | Field evaporation Laser desorption MgO crystal ab intio calculation Laser assisted field evaporation |
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