Reliability of the doping concentration in an ultra-thin body and buried oxide silicon on insulator (SOI) and comparison with a partially depleted SOI |
| |
Authors: | Wen-Teng Chang Chun-Ming Lai Wen-Kuan Yeh |
| |
Affiliation: | Department of Electrical Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Road, Nan-Tzu District, Kaohsiung 811, Taiwan |
| |
Abstract: | This study compares the reliability of nMOSFETs with low- and high-doped ultra-thin body and buried oxide (UTBB) with fully depleted (FD) and partially depleted (PD) silicon on insulator (SOI). The high-doped devices display lower off-current leakage performance but more degradation in both hot-carrier stress (HCS) and positive bias temperature instability (PBTI) test at both room temperature and elevated temperature compared with the low-doped devices. The PBTI test indicates that the high-doped devices induce high tunneling leakage and that the degradation is highly associated with temperature. The degradation stabilizes with an increase in stress time. The thinner PD-SOI demonstrates low variation at the threshold voltage and low drive current under HCS. The FD-SOI has better drain leakage control than the PD-SOI. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |