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A 2D sub-threshold current model for single halo triple material surrounding gate (SHTMSG) MOSFETs |
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| Authors: | P. Suveetha Dhanaselvam N.B. Balamurugan |
| Affiliation: | 1. Department of Electronics and Communication Engineering, Velammal College of Engineering and Technology, Madurai, Tamilnadu, India;2. Department of Electronics and Communication Engineering, Thiagarajar College of Engineering, Madurai, Tamilnadu, India |
| Abstract: | In the proposed work analytical modeling of single halo triple material surrounding gate (SH-TMSG) MOSFET is developed. The threshold voltage and subthreshold current has been derived using parabolic approximation method and the simulation results are analyzed. The threshold voltage roll off is reduced and it denotes the deterioration of short channel effects. The results of the analytical model are delineated and compared with MEDICI simulation results and it is well corroborated. |
| Keywords: | Threshold voltage Subthreshold current Short channel effects |
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