Far infrared stimulated and spontaneous radiation in uniaxially deformed zero-gap Hg1−x
CdxTe |
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Authors: | E F Venger S G Gasan-zade M V Strikha S V Staryi G A Shepel’skii |
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Affiliation: | (1) Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 252028, Ukraine |
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Abstract: | Stimulated radiation in the range of 80–100 µm was observed in uniaxially stressed zero-gap Hg1?x CdxTe (x=0.10–0.14) under conditions of impact ionization by an electric field. The abrupt increase in emission occurs under the threshold values of elastic strain and electric-field strength and is followed by an abrupt increase in the current in the sample. The field and deformation dependences of spontaneous radiation are also determined. The mechanism of the effect observed is suggested taking into account the transformation of energy bands and impurity acceptor levels by the uniaxial elastic stress. |
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