Energetics of intrinsic point defects in uranium dioxide from electronic-structure calculations |
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Authors: | Pankaj Nerikar James S Tulenko Susan B Sinnott |
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Affiliation: | a Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, United States b Department of Nuclear and Radiological Engineering, University of Florida, Gainesville, FL 32611, United States |
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Abstract: | The stability range of intrinsic point defects in uranium dioxide is determined as a function of temperature, oxygen partial pressure, and non-stoichiometry. The computational approach integrates high accuracy ab initio electronic-structure calculations and thermodynamic analysis supported by experimental data. In particular, the density functional theory calculations are performed at the level of the spin polarized, generalized gradient approximation and includes the Hubbard U term; as a result they predict the correct anti-ferromagnetic insulating ground state of uranium oxide. The thermodynamic calculations enable the effects of system temperature and partial pressure of oxygen on defect formation energy to be determined. The predicted equilibrium properties and defect formation energies for neutral defect complexes match trends in the experimental literature quite well. In contrast, the predicted values for charged complexes are lower than the measured values. The calculations predict that the formation of oxygen interstitials becomes increasingly difficult as higher temperatures and reducing conditions are approached. |
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