| 脉冲供氧反应磁控溅射TiO2薄膜的结构和形貌研究 |
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| 引用本文： | 王秩伟,龚恒翔,李雪,谭永胜.脉冲供氧反应磁控溅射TiO2薄膜的结构和形貌研究[J].中国材料科技与设备,2008,5(1):52-55. |
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| 作者姓名： | 王秩伟 龚恒翔 李雪 谭永胜 |
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| 作者单位： | [1]西华师范大学物理与电子信息学院,四川南充637002 [2]绍兴文理学院材料物理与设备研究所,浙江绍兴312000 |
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| 基金项目： | 绍兴市科技局资助项目（2003141和2004147） |
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| 摘 要： | 利用脉冲供氧反应磁控溅射制备了TiO2薄膜。分别用XRD和SEM研究了晶体结构和表面形貌。结果表明，当氧浓度高或Toff小，样品为锐钛矿结构，晶粒大小20～30nm；而当氧浓度低或Toff大，样品为金红石结构，晶粒大小10～15nm。应变分析表明，锐钛矿结构只存在压应变，大小0．044～0．211；而金红石存在压应变（大小0．021-0．398）或张应变（大小0．182～0．438）。氧浓度低（或Toff大）样品具有更平整的表面和更均一的晶粒大小。
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| 关 键 词： | TiO2 脉冲供氧 反应磁控溅射 应变 形貌 |
Study of Structure and Topography of TiO2 Films Deposited by Pulse Oxygen-supply Reactive Magnetron Sputtering |
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| WANG Zhi-wei, GONG Heng-xiang, LI Xue, TAN Yong-sheng.Study of Structure and Topography of TiO2 Films Deposited by Pulse Oxygen-supply Reactive Magnetron Sputtering[J].Chinese Materials Science Technology & Equipment,2008,5(1):52-55. |
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| Authors: | WANG Zhi-wei GONG Heng-xiang LI Xue TAN Yong-sheng |
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| Affiliation: | WANG Zhi-wei, GONG Heng-xiang, LI Xue, TAN Yong-sheng (1. College of Physics and Electronic Information, China West Normal University, Sichuan, Nanchong, 637002, China 2. Institution of Material Physics and Equipment, Shaoxing University, Zhejiang, Shaoxing, 312000, China) |
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| Abstract: | Pulse oxygen-supply reactive magnetron sputtering was used to deposit TiO2 thin films. XRD and SEM were used to determine the structure and surface topography, respectively. The results indicated that films deposited at high oxygen concentration or short To, contains anatase with large grain size of about 20-30nm while at that of low or long contains rutile with small grain size of about 10-15nm. Strain analysis shows that anatase only with compression strain of magnitude from 0. 044 to 0. 211 while rutile with compression strains of that from 0. 021 to 0. 398 and tensile strain 0. 182 to 0. 438. Sample possesses smoother surface and more uniform size at low oxygen concentration or long Toff. |
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| Keywords: | TiO2 Pulse oxygen-supply Reactive magnetron sputtering Strain Topography |
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