Design of a trimmed current reference with a low temperature drift |
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Authors: | TANG Hualian ZHUANG Yiqi ZHANG Li JING Xin DU Yongqian |
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Affiliation: | (Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071, China) |
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Abstract: | Component tolerances and mismatches due to process variations severely degrade the performance of bandgap reference circuits. Based on device mismatch models, a current reference Iref with adjustable output current from 15μA to 80μA is designed. A compensated circuit is used to reduce the temperature drift. To achieve more accurate current reference, an 8bit bi-directional trimming array with 127 current levels is proposed. This digitally programmable array is binary weighted for accuracy and flexibility. Simulation shows that the temperature coefficient is 26ppm/℃ over the wide range of -40℃ to 120℃when the output current is 15μA. Based on the CMOS 0.13μm technology, the measurement results show that the trimmed range and precision for current reference are -14.3%·Iref~14.3%·Iref and 0.11%·Iref, respectively. The circuit could be applied to high precision A/D and D/A converters. |
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Keywords: | current reference temperature coefficient process variations trimming |
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