半导体化合物外延技术的进展

本文介绍和比较了汽相外延(卤化物CVD、氢化物CVD、有机金属化合物CVD)、液相外延、分子束外延等几种外延技术以及离子注入技术.在制作特殊器件的外延结构中,它们都各有优缺点,所以目前分立微波、光电器件多用卤化物CVD和液相外延制作,而MBE、MOCVD和离子注入技术的发展将适用于单片集成电路和大规模生产.可以相信,微波整机的未来将取决于晶片的质量、大小和理想的外延技术.

Epitaxial Technique Progress of Semiconductor Compound

The paper describs and compares some epitaxial techniques of vapor-phase epitaxy (halide chemical vapor deposition, hydride CVD, metalorganic CVD), liquid phase epitaxy, molecular-beam epitaxy and ion implantation technique. Each of them has advantages and disadvantages in fabricating epitaxial structures for specific devices, therefore halide CVD and liquid-phase epitaxy have been used mostly for discrete microwave and optoelectronic devices at present while MBE, MOCVD and I I would get developed for monolithic ICs and mass-production. It is sure that the future of microwave system will depend on wafer quality, size and excellent epitaxial technique.