| 多层多孔硅的SPM研究 |
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| 引用本文： | 胡舜涛,杨建树,袁帅,蔡群,董树忠,侯晓远.多层多孔硅的SPM研究[J].电子显微学报,1999,18(1):72-75. |
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| 作者姓名： | 胡舜涛 杨建树 袁帅 蔡群 董树忠 侯晓远 |
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| 作者单位： | 复旦大学应用表面物理国家重点实验室,上海,200433 |
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| 摘 要： | 多层我孔硅是采用交替变化脉冲腐蚀电流密度的方法制成的多孔度周期性变化的多孔硅结构，我们用ＡＦＭ对多层多孔硅结构的侧向解理的截面进行观测，得到了不同多孔度层及其界面处的图像。发现不同周期中相同条件下腐蚀得到的多孔硅层，其层厚随周期的不同而不同，从而限制了多孔硅发光峰半宽的缩小，对多层我孔硅的电化学同理作了初步的探讨。
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| 关 键 词： | 原子力显微镜 多层多孔硅 多层结构 |
SPM research on multilayer porous silicon |
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| HU Shun-tao,YANG Jian-shu,YUAN Shuai,CAI Qun,DONG Shu-zhong,HOU Xiao-yuan.SPM research on multilayer porous silicon[J].Journal of Chinese Electron Microscopy Society,1999,18(1):72-75. |
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| Authors: | HU Shun-tao YANG Jian-shu YUAN Shuai CAI Qun DONG Shu-zhong HOU Xiao-yuan |
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| Abstract: | Multilayer porous silicon(MLPS) was etched with alternate varied current density which made the porosity change periodically.We use AFM to investigate the cross section of the MLPS structure and get images of different layers with different porosity.It is found that there is a inhomogenity of thickness of different layers in different period which was etched under the same condition.This inhomogenity lead to the broadening of the luminescent peak of the MLPS. |
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| Keywords: | AFM multilayer porous silicon multilayer structure |
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