| 一种高精度低电源电压带隙基准源的设计 |
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| 引用本文： | 刘宗福,马冬冬,赵丹辉. 一种高精度低电源电压带隙基准源的设计[J]. 电子科技, 2010, 23(11): 41-43 |
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| 作者姓名： | 刘宗福 马冬冬 赵丹辉 |
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| 作者单位： | 中国人民解放军92785部队,技术室,河北,秦皇岛,066200;中国人民解放军92785部队,技术室,河北,秦皇岛,066200;中国人民解放军92785部队,技术室,河北,秦皇岛,066200 |
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| 摘 要： | 设计了一种可在低电源电压下工作,具有较高电源电压抑制比、低温度系数和低功耗的带隙基准电压源。电路基于对具有正负温度系数的两路电流加权求和的原理,对传统电路做出了改进。采用UMC 0.25 μmCMOS工艺模型,使用Hspice进行模拟,设计的基准源输出电压为900 mV,电源电压可降低到1.1 V,温度系数为8.1×10-6/℃。
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| 关 键 词： | 带隙基准 温度系数 低电源电压 |
Design of a Bandgap Voltage Reference with High Accuracy and Low Power Voltage |
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| Liu Zongfu,Ma Dongdong,Zhao Danhui. Design of a Bandgap Voltage Reference with High Accuracy and Low Power Voltage[J]. Electronic Science and Technology, 2010, 23(11): 41-43 |
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| Authors: | Liu Zongfu Ma Dongdong Zhao Danhui |
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| Affiliation: | (Depertment of Technology,Unit 92785 of PLA,Qinhuangdao 066200, China) |
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| Abstract: | A bandgap reference circuit with low power supply,high PSRR,low temperature coefficient and low power dissipation is designed.The bangap reference is based on the sum of two currents with both positive and negative temperature coefficients,and some improvement is made on the traditional design.The voltage reference is implemented in a UMC 0.25 μm CMOS process and simulated with Hspice.The output voltage is 900 mV,the power supply can reduce to 1.1 V,and the temperature coefficient is 8.1×10-6/℃. |
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| Keywords: | bandgap reference temperature coefficient low power voltage |
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