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大周长面积比延伸波长InGaAs红外焦平面噪声
引用本文:黄松垒,张伟,黄张成,许中华,方家熊. 大周长面积比延伸波长InGaAs红外焦平面噪声[J]. 红外与毫米波学报, 2012, 31(3): 235-238
作者姓名:黄松垒  张伟  黄张成  许中华  方家熊
作者单位:1. 中国科学院上海技术物理研究所,传感技术联合国家重点实验室,上海200083;中国科学院研究生院,北京100039
2. 中国科学院上海技术物理研究所,传感技术联合国家重点实验室,上海200083
基金项目:国家自然科学基金(50632060)资助项目。
摘    要:在理论上分析了红外焦平面组件中光敏元、读出电路以及两者耦合的总噪声特性,对大周长面积比(38×500μm2)延伸波长InGaAs组件的噪声与温度、积分时间的关系进行了实验和分析.实验结果指出,在一定条件下组件噪声与积分时间的根号并不成正比.测量了不同温度下的组件暗信号、噪声,得到组件噪声与暗电流的关系,分析表明,该种组件噪声主要来自于1/f噪声及读出电路输入级电流噪声.

关 键 词:延伸波长铟镓砷  焦平面噪声  积分时间
收稿时间:2011-04-14
修稿时间:2011-04-13

The noise of the extended wavelength InGaAs FPA with large perimeter area ratio
HUANG Song-Lei,ZHANG Wei,HUANG Zhang-Cheng,XU Zhong-Hua and FANG Jia-Xiong. The noise of the extended wavelength InGaAs FPA with large perimeter area ratio[J]. Journal of Infrared and Millimeter Waves, 2012, 31(3): 235-238
Authors:HUANG Song-Lei  ZHANG Wei  HUANG Zhang-Cheng  XU Zhong-Hua  FANG Jia-Xiong
Affiliation:State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,Graduate University of Chinese Academy of Sciences;State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,Graduate University of Chinese Academy of Sciences;State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,Graduate University of Chinese Academy of Sciences;State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science
Abstract:The total noises of focal plane array sensors, readout circuit and their coupling noise were theoretically analyzed. The temperature and integral time dependence of the noise were measured and analyzed for large perimeter area ratio of extended wavelength InGaAs FPA (38×500 μm2). The experimental results show that in certain conditions, FPA noise is not proportional to the square root of integral time. The relationship between FPA noise and dark current at different temperature were studied. Results show that the noises mainly come from 1/f noise and the current noise at the input stage of readout circuit.
Keywords:extended wavelength InGaAs  focal plane array noise  integral time
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