Ordered arrays of Si nanocrystals in SiO2: Structural,optical, and electronic properties |
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| Authors: | I. V. Antonova V. A. Skuratov J. Jedrzejewski I. Balberg |
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| Affiliation: | (1) Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139-4307, USA;(2) Department of Electrical and Computer Engineering, Boston University, Boston;(3) Massachusetts 02215 and Materials Science Division, Boston University, Boston, Massachusetts, 02215 |
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| Abstract: | It is found that irradiation of SiO2 layers containing Si nanocrystals with high-energy heavy ions induces profound structural modifications—specifically, the formation of vertically ordered arrays of nanocrystals along the ion tracks. This effect results in substantial changes in the electrical properties (the conductivity and capacitance—voltage characteristics) and optical (photoluminescence) properties of the layers containing nanocrystals. |
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